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hexfet power mosfet notes through are on page 11 d 2 pak irl3713spbf to-220ab IRL3713PBF to-262 irl3713lpbf applications benefits ultra-low gate impedance very low r ds(on) at 4.5v v gs fully characterized avalanche voltage and current lead-free high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor powe r 100% r g tested v dss r ds(on) max (m i d 30v 3.0@v gs = 10v 260a * r jc (end of life) for d 2 pak and to-262 = 0.50c/w. this is the maximum measured value after 1000 temperature cycles from -55 to 150c and is accounted for by the physical wearout of the die attach medium. symbol parameter units v ds drain-source voltage v v gs gate-to-source voltage v i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c maximum power dissipation p d @tc = 100c maximum power dissipation linear derating factor w/c t j , t stg junction and storage temperature range c symbol parameter typ max units r jc junction-to-case ??? 0.45* r qcs case-to-sink, flat, greased surface 0.50 ??? r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount) ??? 40 thermal resistance absolute maximum ratings max 260 180 1040 30 20 2.2 170 c/w w -55 to +175 330 smps mosfet

base part number form quantity IRL3713PBF to-220 tube 50 IRL3713PBF irl3713slpbf to-262 tube 50 irl3713slpbf tube 50 irl3713spbf tape and reel left 800 irl3713strlpbf tape and reel right 800 irl3713strrpbf package type standard pack orderable part number irl3713spbf d 2 pak

symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v . 0.0 . .0 . .0 1.0 . 0 0 100 00 00 symbol parameter min typ max units gfs forward transconductance 76 ??? ??? s q g total gate charge ??? 75 110 q gs gate-to-source charge ??? 24 ??? nc q gd gate-to-drain ("miller") charge ??? 37 ??? q oss output gate charge 61 92 r g gate resistance 0.5 ??? 3.4 t d(on) turn-on delay time ??? 16 ??? t r rise time ??? 160 ??? t d(off) turn-off delay time ??? 40 ??? t f fall time ??? 57 ??? c iss input capacitance ??? 5890 ??? c oss output capacitance ??? 3130 ??? c rss reverse transfer capacitance ??? 630 ??? symbol parameter units e as mj i ar a symbol parameter min typ max units continuous source current (body diode) pulsed source current (body diode) ??? 0.80 1.3 ??? 0.68 ??? t rr reverse recovery time ??? 75 110 ns q rr reverse recovery charge ??? 140 210 nc t rr reverse recovery time ??? 78 120 ns q rr reverse recovery charge ??? 160 240 nc t j = 125c, i f = 30a, v r = 20v di/dt = 100a/ s t j = 125c, i s = 30a, v gs = 0v t j = 25c, i f = 30a, v r = 0v di/dt = 100a/ s conditions integral reverse p-n junction diode. t j = 25c, i s = 30a, v gs = 0v mosfet symbol showing the ??? conditions v ds = 15v, i d = 30a i d = 30a v ds = 15v v gs = 4.5v v gs = 0v v ds = 15v 1530 46 v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c v gs = 20v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 38a v gs = -20v v gs = 4.5v, i d = 30a max v gs = 4.5v v dd = 15v i d = 30a r g = 1.8 v ds = 24v, v gs = 0v ? = 1.0mhz v ds = v gs , i d = 250 a static @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss diode characteristics avalanche characteristics dynamic @ t j = 25c (unless otherwise specified) m i dss drain-to-source leakage current a avalanche current typ ??? na ns pf single pulse avalanche energy i s ??? ??? 260 v gs = 0v, v ds = 15v v sd diode forward voltage v a i sm ??? ??? 1040

fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 10v 8.0v 6.0v 4.5v 4.0v 3.3v 2.8v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 10v 8.0v 6.0v 4.5v 4.0v 3.3v 2.8v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 1 10 100 1000 2.5 3.0 3.5 4.0 4.5 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 260a

fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 40 80 120 160 0 2 4 6 8 10 12 14 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 30a v = 6v ds v = 15v ds v = 24v ds 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 50 100 150 200 250 300 t , case temperature ( c) i , drain current (a) c d limited by package

q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 175 0 500 1000 1500 2000 2500 3000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 30a 38a 46a r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mb led on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c we e k 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free"

dat e code ye ar 0 = 2000 week 02 a = as s e mb l y s i t e code rect if ier int ernat ional part number p = de s ignat e s l e ad - f r e e product (opt ional) f 530s in t he as s emb ly l ine "l" as s embled on ww 02, 2000 t his is an ir f530s wit h lot code 8024 int ernat ional logo rect if ier lot code assembly ye ar 0 = 2000 part number dat e code line l we e k 02 or f 530s logo assembly lot code

to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rectifier int e rnat ional as s e mb l e d on ww 19, 1997 note: "p" in ass embly line pos i tion i ndi cates "l ead- f r ee" in the assembly line "c" logo t his is an irl 3103l lot code 1789 example: line c dat e code we e k 19 ye ar 7 = 1997 part number part number logo lot code as s e mb l y int ernat ional rect if ier product (optional) p = d e s i gn at e s l e ad- f r e e a = assembly site code we e k 19 ye ar 7 = 1997 dat e code or

dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.4mh, r g = 25 , i as = 46a,v gs =10v.
pulse width 400 s; duty cycle 2%.
this is only applied to to-220a package.
this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a.

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to-220 pak to-262 pak ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level n/a d2-pak ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ds with new ir corporate template ? revision history 6/17/2013

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